IRFP450B 500V N-channel B-FET / Substitute of IRFP450 & IRFP450A IRFP440B 500V N-channel B-FET / Substitute of IRFP440 & IRFP440A IRFP350A 400V N-channel A-FET / Substitute of IRFP350 IRFP340B 400V N-channel B-FET / Substitute of IRFP340 & IRFP340A IRFP254B 250V N-channel B-FET / Substitute of IRFP254 & IRFP254A Some Part number from the same manufacture Fairchild Semiconductor TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION t, PULSE WIDTH (s) 100 101 = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: TC 150 VGS = 10V Normalized Maximum Transient Thermal Impedance PDM t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: = t1/t2 PEAK TJ = PDM x ZJC x RJC 10-2 t, RECTANGULAR PULSE DURATION (s) 100 101įigure 3. Maximum Continuous Drain Current vs Case Temperature
Normalized Power Dissipation vs Ambient Temperatureįigure 2. 2: Pulse width 300µs duty cycle 2%.įigure 1. VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 18A ISD = 18A, dISD/dt = 100A/µs ISD = 18A, dISD/dt ns nC TON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 18A VGS = 10V, RGS ns VGS(TH) rDS(ON) gfs Gate to Source Threshold Voltage Drain to Source On Resistance Forward Transconductance VGS = VDS, = 18A, VGS = 10V VDS = 18A (Note V SĬISS COSS CRSS Qg(TOT) Qg(10) Qg(TH) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 20V Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS to 20V VDD = 18A VGS = 2.0mA VGS to 10V VDS = 25V, VGS pF nC RJC RJA Thermal Resistance Junction to Case TO-247 Thermal Resistance Junction to Ambient 0.70 40ĭevice Marking IRFP250N Device IRFP250N Package TO-247 Reel Size Tube Tape Width N/A Quantity 30īVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current = 250♚, VGS = 0V VDS = 200V VDS = 160V VGS = ☒0V VGS ♚ nA Symbol VDSS VGS Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC = 25oC, VGS = 10V) Continuous (TC = Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 100oC, VGS 30 21 Figure mJ W W/oC TO-247 MOSFET Maximum Ratings = 25☌ unless otherwise noted
Ultra Low On-Resistance - rDS(ON) = 0.052 (Typ), VGS = 10V Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models Peak Current vs Pulse Width Curve UIS Rating Curve
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